Dong Haibo, Zhang Xiaoxian, Niu Zhiqiang, Zhao Duan, Li Jinzhu, Cai Le, Zhou Weiya, Xie Sishen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1300-3. doi: 10.1166/jnn.2013.5977.
Indium tin oxide (ITO), as one of the most important transparent conducting oxide, is widely used in electro-optical field. We have developed a simple one-step method to synthesize ITO nanowires at low temperature of 600 degrees C. In detail, mixtures of InN nanowires and SnO powder, with the molar ratio of 10:1, have been used as precursors for the thermal evaporation-deposition of ITO nanowires on silicon/quartz slices. During the growth process, the evaporation temperature is maintained at 600 degrees C, which favors the decomposition of InN and oxidation of In, with a limited incorporation of Sn in the resulting compound (In:Sn approximately 11:1 in atomic ratio). As far as we know, this is the lowest growth temperature reported on the thermal deposition of ITO nanowires. The diameters of the nanowires are about 120 nm and the lengths are up to tens of micrometers. XRD characterization indicates the high crystallization of the nanowires. HRTEM results show the nanowires grow along the [200] direction. The transmittance of the nanowire film on quartz slice is more than 75% in the visible region. Based on photolithography and lift-off techniques, four-terminal measurement was utilized to test the resistivity of individual nanowire (6.11 x 10(-4) omega x cm). The high crystallization quality, good transmittance and low resistivity make as-grown ITO nanowires a promising candidate as transparent electrodes of nanoscale devices.
氧化铟锡（ITO）作为最重要的透明导电氧化物之一，在电光领域有着广泛的应用。我们开发了一种简单的一步法，在600摄氏度的低温下合成ITO纳米线。具体而言，InN纳米线与SnO粉末的混合物（摩尔比为10:1）被用作在硅/石英片上热蒸发沉积ITO纳米线的前驱体。在生长过程中，蒸发温度保持在600摄氏度，这有利于InN的分解和In的氧化，在所得化合物中Sn的掺入量有限（原子比In:Sn约为11:1）。据我们所知，这是报道的ITO纳米线热沉积的最低生长温度。纳米线的直径约为120纳米，长度可达几十微米。XRD表征表明纳米线具有高结晶度。HRTEM结果显示纳米线沿[200]方向生长。石英片上纳米线薄膜在可见光区域的透过率超过75%。基于光刻和剥离技术，采用四端测量法测试了单根纳米线的电阻率（6.11×10⁻⁴Ω·cm）。高结晶质量、良好的透过率和低电阻率使得生长出的ITO纳米线成为纳米级器件透明电极的有前途的候选材料。
