Parida Bhaskar, Gil Youngun, Kim Hyunsoo
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1455-1462. doi: 10.1166/jnn.2019.16242.
High-quality ITO (indium tin oxide) films were grown by radio frequency (RF) magnetron sputtering and post thermal annealing. Both the thermal annealing temperature and the atmosphere significantly influenced the optical and electrical properties of ITO films. The as-grown 110-nm-thick ITO film showed an optical transmittance of 34.2% at a wavelength of 550 nm and electrical resistivity of 9.2×10 Ωcm. Notably, the ITO films annealed at 850 °C for 1 min in nitrogen ambient led to a significantly improved optical transmittance (97.3%) and the low electrical resistivity of 1.3×10 Ωcm, while those annealed in air or oxygen ambient produced poorer electrical properties despite their good optical transmittance owing to the presence of oxygen. The high quality of the ITO film annealed in nitrogen could be attributed to the combined effects of effective suppression of oxygen incorporation into films (thus maintaining oxygen vacancies in the ITO film), enhanced Sn doping, and improved the crystallinity with larger grain size.
通过射频（RF）磁控溅射和后续热退火制备了高质量的氧化铟锡（ITO）薄膜。热退火温度和气氛都对ITO薄膜的光学和电学性能产生了显著影响。生长态的110纳米厚ITO薄膜在波长550纳米处的光学透过率为34.2%，电阻率为9.2×10Ω·cm。值得注意的是，在氮气环境中于850℃退火1分钟的ITO薄膜，其光学透过率显著提高（97.3%），电阻率低至1.3×10Ω·cm，而在空气或氧气环境中退火的薄膜，尽管光学透过率良好，但由于氧的存在，电学性能较差。在氮气中退火的ITO薄膜质量高，这可归因于有效抑制氧掺入薄膜（从而在ITO薄膜中保持氧空位）、增强的锡掺杂以及通过更大的晶粒尺寸改善了结晶度的综合作用。
