Lin Chun-Chieh, Wu Po-Hung, Chang Yi-Peng
Department of Electrical Engineering, National Dong Hwa University, Hualien 97401, Taiwan.
J Nanosci Nanotechnol. 2013 Jan;13(1):483-6. doi: 10.1166/jnn.2013.6884.
In this work, the effects of crystallization and non-lattice oxygen atoms on the Cu(x)O-based memory device are investigated. The 150 degrees C-deposited Cu(x)O film possesses a larger amount of non-lattice oxygen atoms than those deposited at the higher temperatures, leading to the formation of AIOy interface layer during the sputtering deposition of Al top electrode. Resistive switching occurring within the interface layer is easily controlled, so the set and reset voltages are decreased. In addition, it is demonstrated that the set and reset processes agree with the formation and rupture of a conductive filament in the Cu(x)O film. The 150 degrees C-deposited Cu(x)O-based memory device with good non-volatility is possibly used in the next-generation non-volatile memory.
在这项工作中，研究了结晶和非晶格氧原子对基于Cu(x)O的存储器件的影响。在150℃沉积的Cu(x)O薄膜比在较高温度下沉积的薄膜具有更多的非晶格氧原子，这导致在溅射沉积Al顶电极期间形成AIOy界面层。发生在界面层内的电阻开关易于控制，因此设置和重置电压降低。此外，还表明设置和重置过程与Cu(x)O薄膜中导电细丝的形成和断裂一致。具有良好非易失性的150℃沉积的基于Cu(x)O的存储器件可能用于下一代非易失性存储器。
