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双层电阻式随机存取记忆体中的电阻切换的物理电热模型。

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

机构信息

Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea.

出版信息

Sci Rep. 2013;3:1680. doi: 10.1038/srep01680.

DOI:10.1038/srep01680
PMID:23604263
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3631947/
Abstract

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been studied intensively and several phenomenological models have consistently predicted the resistance-change behavior. However, a physics-based model that describes a complete bi-layered RRAM structure has not yet been demonstrated. Here, a complete electro-thermal resistive switching model based on the finite element method is proposed. The migration of oxygen vacancies is simulated by the local temperature and electric field derived from carrier continuity and heat equations fully coupled in a 3-D geometry, which considers a complete bi-layered structure that includes the top and bottom electrodes. The proposed model accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive switching.

摘要

基于氧化钽的双层电阻式随机存取存储器 (RRAM) 在记忆性能方面最近得到了极大的改善。通常认为，导电线的形成和断裂是电阻开关的基础机制。已经对丝的性质进行了深入研究，并且几个现象学模型一致地预测了电阻变化行为。但是，尚未展示出描述完整双层 RRAM 结构的基于物理的模型。在这里，提出了一种基于有限元法的完整的电热电阻开关模型。通过载体连续性和热方程导出的局部温度和电场来模拟氧空位的迁移，该模型在 3D 几何形状中完全耦合，其中考虑了包括顶部和底部电极的完整双层结构。所提出的模型准确地解释了设置/重置特性，从而深入了解了电阻开关的性质。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/49e986356813/srep01680-f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/d36c81375c2f/srep01680-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/9ee215583ccc/srep01680-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/069ff8d4bc3b/srep01680-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/f3abbf147c81/srep01680-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/7f3b7b2ba628/srep01680-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/c63ae21009f9/srep01680-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/82d9be2ecb5e/srep01680-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/9633ed75fa84/srep01680-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/49e986356813/srep01680-f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/d36c81375c2f/srep01680-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/21cc743c6e1b/srep01680-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/6d23840e571a/srep01680-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/9ee215583ccc/srep01680-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/069ff8d4bc3b/srep01680-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/f3abbf147c81/srep01680-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/7f3b7b2ba628/srep01680-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/c63ae21009f9/srep01680-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/82d9be2ecb5e/srep01680-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/9633ed75fa84/srep01680-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28bb/3631947/49e986356813/srep01680-f11.jpg

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