Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France.
Adv Mater. 2013 Jun 18;25(23):3222-6. doi: 10.1002/adma.201301113. Epub 2013 May 6.
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
在三个典型的窄能隙莫特系统中，电场驱动的电阻开关表现出显著的普适性。该模型基于莫特现象的关键理论特征，再现了这种电阻开关的一般行为，并证明它可以与动态定向的雪崩相关联。该模型预测了非平凡的积累和弛豫时间，实验验证了这些时间。
