Department of Physics and Astronomy, Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA.
Phys Rev Lett. 2013 Apr 26;110(17):176602. doi: 10.1103/PhysRevLett.110.176602. Epub 2013 Apr 24.
A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.
本文提出了一种用于描述无序体系中跳跃载流子自旋弛豫和自旋扩散的理论。对于由跳跃之间的等待时间分布（例如，来自多个陷阱、局域能无序和/或位置无序）描述的无序，在有机半导体中主要的自旋弛豫机制（超精细相互作用、跳跃诱导的自旋轨道耦合和局域内自旋弛豫）各自对温度表现出不同的特征自旋弛豫和自旋扩散依赖性。该理论为有机半导体中每种机制预测的独特实验特征为确定主要的自旋弛豫机制提供了一种方法。
