用于X射线显微镜中菲涅耳波带片的离子束光刻技术。

Ion beam lithography for Fresnel zone plates in X-ray microscopy.

作者信息

Keskinbora Kahraman, Grévent Corinne, Bechtel Michael, Weigand Markus, Goering Eberhard, Nadzeyka Achim, Peto Lloyd, Rehbein Stefan, Schneider Gerd, Follath Rolf, Vila-Comamala Joan, Yan Hanfei, Schütz Gisela

机构信息

Max Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany.

出版信息

Opt Express. 2013 May 20;21(10):11747-56. doi: 10.1364/OE.21.011747.

DOI:10.1364/OE.21.011747

PMID:23736396

Abstract

Fresnel Zone Plates (FZP) are to date very successful focusing optics for X-rays. Established methods of fabrication are rather complex and based on electron beam lithography (EBL). Here, we show that ion beam lithography (IBL) may advantageously simplify their preparation. A FZP operable from the extreme UV to the limit of the hard X-ray was prepared and tested from 450 eV to 1500 eV. The trapezoidal profile of the FZP favorably activates its 2nd order focus. The FZP with an outermost zone width of 100 nm allows the visualization of features down to 61, 31 and 21 nm in the 1st, 2nd and 3rd order focus respectively. Measured efficiencies in the 1st and 2nd order of diffraction reach the theoretical predictions.

摘要

菲涅耳波带片（FZP）是目前非常成功的X射线聚焦光学元件。已有的制造方法相当复杂，且基于电子束光刻（EBL）。在此，我们表明离子束光刻（IBL）可能会有利地简化其制备过程。制备了一种可在极紫外到硬X射线极限范围内工作的FZP，并在450 eV至1500 eV范围内进行了测试。FZP的梯形轮廓有利于激活其二级焦点。最外层区域宽度为100 nm的FZP分别在一级、二级和三级焦点处能够实现低至61 nm、31 nm和21 nm特征的可视化。一级和二级衍射的测量效率达到了理论预测值。