Labani Maha, Clericò Vito, Diez Enrique, Gatti Giancarlo, Amado Mario, Pérez-Rodríguez Ana
Nanotechnology Group, USAL-Nanolab, Departamento de Física Fundamental, Universidad de Salamanca (USAL), E-37008 Salamanca, Spain.
Centro de Láseres Pulsados (CLPU), E-37185 Villamayor, Spain.
Nanomaterials (Basel). 2024 Nov 26;14(23):1898. doi: 10.3390/nano14231898.
The ability to manufacture complex 3D structures with nanometer-scale resolution, such as Fresnel Zone Plates (FZPs), is crucial to achieve state-of-the-art control in X-ray sources for use in a diverse range of cutting-edge applications. This study demonstrates a novel approach combining Electron Beam Lithography (EBL) and cryoetching to produce silicon-based FZP prototypes as a test bench to assess the strong points and limitations of this fabrication method. Through this method, we obtained FZPs with 100 zones, a diameter of 20 µm, and an outermost zone width of 50 nm, resulting in a high aspect ratio that is suitable for use across a range of photon energies. The process incorporates a chromium mask in the EBL stage, enhancing microstructure precision and mitigating pattern collapse challenges. This minimized issues of under- and over-etching, producing well-defined patterns with a nanometer-scale resolution and low roughness. The refined process thus holds promise for achieving improved optical resolution and efficiency in FZPs, making it viable for the fabrication of high-performance, nanometer-scale devices.
能够制造具有纳米级分辨率的复杂三维结构,如菲涅耳波带片(FZP),对于在各种前沿应用的X射线源中实现先进控制至关重要。本研究展示了一种结合电子束光刻(EBL)和低温蚀刻的新方法,以生产基于硅的FZP原型作为测试平台,来评估这种制造方法的优点和局限性。通过这种方法,我们获得了具有100个波带、直径为20 µm且最外波带宽度为50 nm的FZP,从而得到了适用于一系列光子能量的高纵横比。该工艺在EBL阶段采用了铬掩膜,提高了微观结构精度并减轻了图案塌陷问题。这最大限度地减少了蚀刻不足和过度蚀刻的问题,产生了具有纳米级分辨率和低粗糙度的清晰图案。因此,这种改进的工艺有望在FZP中实现更高的光学分辨率和效率,使其适用于制造高性能纳米级器件。