用于密集集成光子互连网络的超低串扰、CMOS兼容波导交叉

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

作者信息

Jones Adam M, DeRose Christopher T, Lentine Anthony L, Trotter Douglas C, Starbuck Andrew L, Norwood Robert A

机构信息

Applied Photonic Microsystems, Sandia National Laboratories,Albuquerque, NM 87123, USA.

出版信息

Opt Express. 2013 May 20;21(10):12002-13. doi: 10.1364/OE.21.012002.

DOI:10.1364/OE.21.012002

PMID:23736422

Abstract

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

摘要

我们探索了在硅光子学平台上优化与CMOS兼容的波导交叉的设计空间。本文展示了绝缘体上硅波导交叉上垂直集成的氮化硅的模拟和实验额外损耗及串扰抑制数据。实验结果表明，在垂直间隙为410nm的波导交叉中，TE/TM模式的串扰抑制超过-49/-44dB，模拟结果低至-65/-60dB。