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基于弯曲各向异性超材料实现的覆盖所有光通信波段的温度不敏感且低损耗单模硅波导交叉结构

Temperature-insensitive and low-loss single-mode silicon waveguide crossing covering all optical communication bands enabled by curved anisotropic metamaterial.

作者信息

Zhang Jinsong, Xu Luhua, Mao Deng, D'Mello Yannick, Wei Zixian, Li Weijia, Plant David V

机构信息

Department of Electrical and Computer Engineering, McGill University, Montreal, H3A 0E9, Canada.

出版信息

Nanophotonics. 2023 Oct 6;12(21):4095-4107. doi: 10.1515/nanoph-2023-0524. eCollection 2023 Oct.

Abstract

We propose two designs of low-loss and temperature-insensitive single-mode waveguide crossing on silicon-on-insulator (SOI) platform with 415-nm operation bandwidth covering all optical communication bands. Both designs are enabled by subwavelength grating (SWG) modeled as an anisotropic metamaterial. The initial design applies straight SWG as the lateral cladding of the waveguide crossing to minimize the refractive index contrast and reduce the insertion loss (IL), but needs a relatively long taper. An improved design is then proposed where the curved SWG is introduced to replace the straight SWG to decrease the taper length and improve the performance. The waveguide crossing with the improved design achieves a calculated maximum IL of 0.229 dB and maximum crosstalk of -35.6 dB over a 415-nm wavelength range from 1260 nm to 1675 nm. The proposed devices are fabricated and characterized. Measured results of the improved design show a maximum IL of 0.264 dB and maximum crosstalk of -30.9 dB over a 230-nm wavelength range including O-, C-, and L-bands, which accord well with the simulation. Low temperature sensitivity has also been demonstrated in both simulations and experiments.

摘要

我们提出了两种基于绝缘体上硅(SOI)平台的低损耗且对温度不敏感的单模波导交叉结构设计,其工作带宽为415纳米,覆盖了所有光通信频段。这两种设计均由建模为各向异性超材料的亚波长光栅(SWG)实现。初始设计采用直的SWG作为波导交叉处的横向包层,以最小化折射率对比度并降低插入损耗(IL),但需要相对较长的渐变段。随后提出了一种改进设计,其中引入弯曲的SWG来替代直的SWG,以减小渐变段长度并改善性能。采用改进设计的波导交叉结构在1260纳米至1675纳米的415纳米波长范围内,计算得出的最大插入损耗为0.229分贝,最大串扰为-35.6分贝。所提出的器件已制造并进行了表征。改进设计的测量结果显示,在包括O波段、C波段和L波段的230纳米波长范围内,最大插入损耗为0.264分贝,最大串扰为-30.9分贝,与模拟结果吻合良好。在模拟和实验中均已证明了其低温度敏感性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/11501265/5b11c5e3156b/j_nanoph-2023-0524_fig_001.jpg

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