Ago Hiroki, Endo Hiroko, Solís-Fernández Pablo, Takizawa Rina, Ohta Yujiro, Fujita Yusuke, Yamamoto Kazuhiro, Tsuji Masaharu
Institute for Materials Chemistry and Engineering (IMCE) and ‡Graduate School of Engineering Sciences, Kyushu University , Fukuoka 816-8580, Japan.
ACS Appl Mater Interfaces. 2015 Mar 11;7(9):5265-73. doi: 10.1021/am508569m. Epub 2015 Mar 2.
Multilayered heterostructures of two-dimensional materials have recently attracted increased interest because of their unique electronic and optical properties. Here, we present chemical vapor deposition (CVD) growth of triangular crystals of monolayer MoS2 on single-crystalline hexagonal graphene domains which are also grown by CVD. We found that MoS2 grows selectively on the graphene domains rather than on the bare supporting SiO2 surface. Reflecting the heteroepitaxy of the growth process, the MoS2 domains grown on graphene present two preferred equivalent orientations. The interaction between the MoS2 and the graphene induced an upshift of the Raman G and 2D bands of the graphene, while significant photoluminescence quenching was observed for the monolayer MoS2. Furthermore, photoinduced current modulation along with an optical memory effect was demonstrated for the MoS2-graphene heterostructure. Our work highlights that heterostructures synthesized by CVD offer an effective interlayer van der Waals interaction which can be developed for large-area multilayer electronic and photonic devices.
二维材料的多层异质结构由于其独特的电学和光学性质，近年来引起了越来越多的关注。在此，我们展示了通过化学气相沉积（CVD）在同样通过CVD生长的单晶六方石墨烯域上生长单层MoS₂三角晶体。我们发现MoS₂选择性地生长在石墨烯域上，而不是在裸露的支撑SiO₂表面上。反映生长过程的异质外延，在石墨烯上生长的MoS₂域呈现出两个优选的等效取向。MoS₂与石墨烯之间的相互作用导致石墨烯的拉曼G带和2D带发生上移，而对于单层MoS₂则观察到显著的光致发光猝灭。此外，还展示了MoS₂-石墨烯异质结构的光致电流调制以及光学记忆效应。我们的工作突出表明，通过CVD合成的异质结构提供了一种有效的层间范德华相互作用，可用于开发大面积多层电子和光子器件。
