可控生长掺杂策略合成亮白色发光的 Cd:In2S3 纳米晶。
A controllable growth-doping approach to synthesize bright white-light-emitting Cd:In2S3 nanocrystals.
机构信息
State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun Jilin, 130022, China.
出版信息
Nanoscale. 2013 Jul 21;5(14):6318-22. doi: 10.1039/c3nr00878a. Epub 2013 Jun 10.
PMID:23748911
Abstract
A new type of doped Cd:In2S3 NC, which exhibits bright white-light emission with a QY of about 18%, synthesized by a one-pot G-doping synthesis approach is presented. The successful realization of temporal separation of nucleation doping and growth doping makes this approach a facile method to synthesize the In2S3/Cd:In2S3 core/shell nanostructure.
摘要
一种新型掺杂 Cd:In2S3 NC，通过一锅 G 掺杂合成方法合成，具有约 18%的量子产率，呈现明亮的白光发射。成核掺杂和生长掺杂的时间分离的成功实现使得这种方法成为合成 In2S3/Cd:In2S3 核/壳纳米结构的简便方法。
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