Bchiri Y, Bouguila N, Kraini M, Souissi R, Vázquez-Vázquez C, López-Quintela M A, Alaya S
Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences, Université de Gabès Cité Erriadh Manara Zrig, 6072 Gabès Tunisia
Tunis University, Ecole Nationale Supérieure d'ingénieurs de Tunis (ENSIT) Tunisia.
RSC Adv. 2020 Jun 10;10(36):21180-21190. doi: 10.1039/d0ra02945a. eCollection 2020 Jun 2.
Indium sulfide (InS) thin films have been synthesized on glass substrates using the spray technique (CSP). The S : In molar ratio was varied from 1 to 4 in the starting solution. The Raman analysis confirms the formation of the β-InS material and the absence of a secondary phase. The EDS analysis reveals that our layers are pure. The thin film surface is free of cracks, as observed in AFM images. Optical transmission achieved 80% in the visible and near infrared region. The refractive index () is affected by the changes in the S/In molar ratio. The optical parameters, single oscillator energy ( ), dispersion energy ( ) and high frequency dielectric constant ( ), are calculated the Wemple-DiDomenico model. In addition, the photoconductivity kinetics in InS films for S/In = 2 were investigated and analyzed. The - characteristics and the photoresponse were also studied.
采用喷雾技术(CSP)在玻璃衬底上合成了硫化铟(InS)薄膜。起始溶液中S : In摩尔比在1到4之间变化。拉曼分析证实了β-InS材料的形成且不存在第二相。能谱分析表明我们的薄膜是纯净的。如原子力显微镜图像所示,薄膜表面无裂纹。在可见光和近红外区域,光透射率达到了80%。折射率()受S/In摩尔比变化的影响。利用温普尔 - 迪多梅尼科模型计算了光学参数、单振子能量()、色散能量()和高频介电常数()。此外,还对S/In = 2时InS薄膜中的光电导动力学进行了研究和分析。还研究了 - 特性和光响应。