Key laboratory of Organic Synthesis in Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.
Phys Chem Chem Phys. 2013 Jul 21;15(27):11554-8. doi: 10.1039/c3cp50700a. Epub 2013 Jun 10.
Semiconducting bismuth sulfide (Bi2S3) nanoplates with unique highly oriented {001} surfaces were prepared on a large scale using a novel organic precursor Bi(DTCA)3 (DTCA = carbazole-9-carbodithioic acid). The as-prepared Bi2S3 nanoplates were dispersed in dimethyl sulfoxide (DMSO) and spin-coated onto an indium tin oxide (ITO) coated glass substrate. With a simple ITO/Bi2S3/Al stacked structure, the fabricated sandwich-like memory device demonstrates dynamic random access memory (DRAM) characteristics with a maximum ON/OFF current ratio up to 10(6) and a long retention time. It is suggested that the volatile nature of the memory device comes from the Schottky contact between the Bi2S3 nanoplates and the Al electrodes.
半导体硫化铋 (Bi2S3) 纳米板具有独特的高度取向的 {001} 表面，使用新型有机前体 Bi(DTCA)3 (DTCA = 咔唑-9-碳二硫代酸) 可大规模制备。所制备的 Bi2S3 纳米板分散在二甲基亚砜 (DMSO) 中，并旋涂到氧化铟锡 (ITO) 涂覆的玻璃基板上。采用简单的 ITO/Bi2S3/Al 堆叠结构，所制造的三明治状存储器件表现出动态随机存取存储器 (DRAM) 特性，最大 ON/OFF 电流比高达 10(6)，且保留时间长。据认为，存储器件的易失性源于 Bi2S3 纳米板和 Al 电极之间的肖特基接触。
