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评估数百万个在 VLS 生长的硅纳米线上的个体径向结太阳能电池。

Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires.

机构信息

Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), CNRS, Ecole Polytechnique, F-91128 Palaiseau, France.

出版信息

Nanotechnology. 2013 Jul 12;24(27):275401. doi: 10.1088/0957-4484/24/27/275401. Epub 2013 Jun 14.

Abstract

Silicon nanowires (SiNWs) grown on low-cost substrates provide an ideal framework for the monolithic fabrication of radial junction photovoltaics. However, the quality of junction formation over a random matrix of SiNWs, fabricated via a vapor-liquid-solid (VLS) mechanism, has never been assessed in a realistic context. To address this, we probe the current response of individual radial junction solar cells under electron-beam and optical-beam excitations. Excellent current generation from the radial junction units, compared to their planar counterparts, has been recorded, indicating a high junction quality and effective doping in the ultra-thin SiNWs with diameters thinner than 20 nm. Interestingly, we found that the formation of radial junctions by plasma deposition can be quite robust against geometrical disorder and even the crossings of neighboring cell units. These results provide a strong support to the feasibility of building high-quality radial junction solar cells over high-throughput VLS-grown SiNWs on low-cost substrates.

摘要

硅纳米线(SiNWs)在低成本衬底上的生长为单片式径向结光伏器件的制造提供了理想的框架。然而,通过汽-液-固(VLS)机制制造的随机 SiNWs 矩阵上的结形成质量从未在实际情况下进行评估。为了解决这个问题,我们在电子束和光激发下探测单个径向结太阳能电池的电流响应。与平面相比,径向结单元的出色电流产生已被记录下来,这表明在直径小于 20nm 的超薄 SiNWs 中具有高质量的结和有效的掺杂。有趣的是,我们发现通过等离子体沉积形成的径向结对于几何无序甚至相邻单元交叉都具有相当的稳健性。这些结果为在低成本衬底上通过高通量 VLS 生长的 SiNWs 制造高质量径向结太阳能电池的可行性提供了有力支持。

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