LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.
Nano Lett. 2012 Aug 8;12(8):4153-8. doi: 10.1021/nl3017187. Epub 2012 Jul 27.
Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.
硅纳米线（SiNWs）正成为开发新一代径向结太阳能电池的热门选择。我们在这里通过汽-液-固（VLS）模式探索了铋（Bi）催化的 SiNWs 生长和掺杂，以在单个腔室等离子体沉积系统中通过一次减压和低温工艺制造非晶硅径向 n-i-p 结太阳能电池。我们首次提供了证据，表明通过将 Bi 催化剂原子作为 n 型掺杂剂掺入 SiNW 核心中进行催化剂掺杂，可用于制造径向结太阳能电池，其开路电压 V(oc)达到 0.76V 的记录值，并且光捕获效应增强，将短路电流提高到 J(sc) = 11.23mA/cm(2)。更重要的是，这种双催化 SiNW 生长和掺杂策略免除了使用剧毒磷化氢气体的需要，从而大大简化了工艺并降低了构建径向结薄膜太阳能电池的成本。
