Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA.
Phys Rev Lett. 2013 May 31;110(22):227701. doi: 10.1103/PhysRevLett.110.227701.
Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We introduce a band-engineered transverse thermoelectric with p-type Seebeck in one direction and n-type orthogonal, resulting in off-diagonal terms that drive heat flow transverse to electrical current. Such materials are advantageous for microscale devices and cryogenic temperatures--exactly the regimes where standard longitudinal thermoelectrics fail. InAs/GaSb type II superlattices are shown to have the appropriate band structure for use as a transverse thermoelectric.
虽然热电性能通常受到优值系数 ZT 的限制,但横向热电材料通过几何渐变可以在单个腿中实现任意大的温度差,即使 ZT 较差也是如此。我们引入了一种具有 p 型 Seebeck 各向异性的能带工程横向热电材料,产生了驱动热流横向于电流的非对角项。这种材料有利于微尺度器件和低温环境,这正是标准纵向热电材料失效的区域。事实证明,InAs/GaSb 型 II 超晶格具有作为横向热电材料的适当能带结构。