Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569, Japan.
ACS Nano. 2013 Jul 23;7(7):5694-700. doi: 10.1021/nn401992q. Epub 2013 Jun 26.
The conduction properties of graphene were tuned by tailoring the lattice by using an accelerated helium ion beam to embed low-density defects in the lattice. The density of the embedded defects was estimated to be 2-3 orders of magnitude lower than that of carbon atoms, and they functionalized a graphene sheet in a more stable manner than chemical surface modifications can do. Current modulation through back gate biasing was demonstrated at room temperature with a current on-off ratio of 2 orders of magnitude, and the activation energy of the thermally activated transport regime was evaluated. The exponential dependence of the current on the length of the functionalized region in graphene suggested that conduction tuning is possible through strong localization of carriers at sites induced by a sparsely distributed random potential modulation.
通过使用加速氦离子束对晶格进行剪裁，调整了石墨烯的传导性能，在晶格中嵌入低密度缺陷。嵌入缺陷的密度估计比碳原子低 2-3 个数量级，它们以比化学表面修饰更稳定的方式功能化石墨烯片。在室温下通过背栅偏压实现了电流调制，电流开关比为 2 个数量级，并评估了热激活输运模式的激活能。电流对石墨烯功能化区域长度的指数依赖性表明，通过在稀疏分布的随机势调制诱导的位置处对载流子进行强局域化，可实现传导调节。
