Zhou Yungang, Cheng Geng, Li Jing
School of Physical Electronics, University of Electronic Science and Technology of China Chengdu 610054 P. R. China
RSC Adv. 2018 Jan 3;8(3):1320-1327. doi: 10.1039/c7ra11163k. eCollection 2018 Jan 2.
Effectively modulating the magnetism of two-dimensional (2D) systems is critical for the application of magnetic nanostructures in quantum information devices. In this work, by employing density functional theory calculations, we found the coexistence of Co doping and strain can effectively control the spin states of arsenene and antimonene structures. Unstrained Co-doped arsenene (arsenene-Co) and Co-doped antimonene (antimonene-Co) structures are nonmagnetic while under a strain, the magnetic moments of both cases were abruptly increased to about 2 . The emergence of magnetism can be reflected by the reduction of the interactions between Co and its neighboring atoms by the strain, which leads to the spin-splitting of Co-3d states. More importantly, we found that the transition of magnetism accompanies the modifications of the electronic properties of arsenene and antimonene so that under strain both structures can exhibit a novel half-metallic behavior. These results provide an effective pathway for the development of arsenene- and antimonene-based electronic devices by applying Co doping and strain.
有效调制二维(2D)系统的磁性对于磁性纳米结构在量子信息器件中的应用至关重要。在这项工作中,通过采用密度泛函理论计算,我们发现钴掺杂和应变的共存可以有效地控制砷烯和锑烯结构的自旋态。未受应变的钴掺杂砷烯(砷烯 - 钴)和钴掺杂锑烯(锑烯 - 钴)结构是非磁性的,而在应变作用下,这两种情况下的磁矩都突然增加到约2 。磁性的出现可以通过应变导致钴与其相邻原子之间的相互作用减弱来反映,这导致了钴3d态的自旋分裂。更重要的是,我们发现磁性的转变伴随着砷烯和锑烯电子性质的改变,使得在应变下这两种结构都可以表现出一种新型的半金属行为。这些结果为通过应用钴掺杂和应变来开发基于砷烯和锑烯的电子器件提供了一条有效途径。