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控制 Si 上生长的 BaTiO₃ 纳米层的正方度和晶体取向。

Controlling tetragonality and crystalline orientation in BaTiO₃ nano-layers grown on Si.

机构信息

IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

出版信息

Nanotechnology. 2013 Jul 19;24(28):285701. doi: 10.1088/0957-4484/24/28/285701. Epub 2013 Jun 20.

DOI:10.1088/0957-4484/24/28/285701
PMID:23787908
Abstract

A hybrid growth process was developed in order to epitaxially integrate nano-layers of the multi-functional perovskite BaTiO₃ onto Si(001) substrates. In particular, we combined molecular beam epitaxy (MBE) with radio-frequency sputtering. Due to its strong influence on the functional properties, the crystalline structure of the layers was thoroughly investigated throughout our study. MBE-grown seed layers are tetragonal and c-axis oriented up to a thickness of 20 nm. A transition into a-axis films is visible for thicker layers. When the seed layer thickness exceeds 6 nm, subsequently sputtered BaTiO₃ films are epitaxial. However, their crystalline structure, their orientation with respect to the substrate, and their morphology are strongly dependent on the deposition and post-deposition thermal budget. Consistently with their crystalline symmetry, thin MBE BaTiO₃ films are piezo- and ferroelectric with a spontaneous polarization perpendicular to the surface. Also for thick films, the functional response, as determined via piezo-force microscopy, is in good agreement with the structural properties.

摘要

为了将多功能钙钛矿 BaTiO3 的纳米层外延集成到 Si(001) 衬底上,开发了一种混合生长工艺。具体来说,我们将分子束外延 (MBE) 与射频溅射相结合。由于其对功能特性的强烈影响,在整个研究过程中,我们对层的晶体结构进行了彻底的研究。MBE 生长的种子层是四方晶系和 c 轴取向的,厚度可达 20nm。对于较厚的层,可见到向 a 轴薄膜的转变。当种子层厚度超过 6nm 时,随后溅射的 BaTiO3 薄膜是外延的。然而,它们的晶体结构、相对于衬底的取向以及它们的形态强烈依赖于沉积和沉积后的热预算。与晶体对称性一致,MBE 生长的 BaTiO3 薄膜具有垂直于表面的压电和铁电性能,自发极化。对于较厚的薄膜,通过压电力显微镜确定的功能响应也与结构特性非常吻合。

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