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基于超小 Mg 掺杂 CuCrO2 纳米晶的 p 型染料敏化太阳能电池的性能提升。

Enhanced performance of p-type dye-sensitized solar cells based on ultrasmall Mg-doped CuCrO2 nanocrystals.

机构信息

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 PR China.

出版信息

ChemSusChem. 2013 Aug;6(8):1432-7. doi: 10.1002/cssc.201300265. Epub 2013 Jun 21.

Abstract

Herein, we present ultrasmall delafossite-type Mg-doped CuCrO2 nanocrystals prepared by using hydrothermal synthesis and their first application as photocathodes in efficient p-type dye-sensitized solar cells. The short-circuit current density (Jsc ) is notably increased by approximately 27% owing to the decreased crystallite size and the enhanced optical transmittance associated with Mg doping of the CuCrO2 nanocrystalline sample. An open-circuit voltage (Voc ) of 201 mV, Jsc of 1.51 mA cm(-2) , fill factor of 0.449, and overall photoconversion efficiency of 0.132% have been achieved with the CuCr0.9 Mg 0.1 O2 dye photocathode sensitized with the P1 dye under optimized conditions. This efficiency is nearly three times higher than that of the NiO-based reference device, which is attributed to the largely improved Voc and Jsc . The augmentation of Voc and Jsc can be attributed to the lower valance band position and the faster hole diffusion coefficient of CuCr0.9 Mg 0.1 O2 compared to those of the NiO reference, respectively, which leads to a higher hole collection efficiency.

摘要

在此,我们展示了通过水热合成制备的超小 delafossite 型 Mg 掺杂 CuCrO2 纳米晶,并首次将其用作高效 p 型染料敏化太阳能电池中的光电阴极。由于 Mg 掺杂 CuCrO2 纳米晶样品的晶粒尺寸减小和光透射率增强,短路电流密度(Jsc)显著提高了约 27%。在优化条件下,用 P1 染料敏化的 CuCr0.9Mg0.1O2 染料光电阴极,开路电压(Voc)为 201 mV,Jsc 为 1.51 mA cm(-2),填充因子为 0.449,整体光电转换效率为 0.132%。在优化条件下,用 P1 染料敏化的 CuCr0.9Mg0.1O2 染料光电阴极,开路电压(Voc)为 201 mV,Jsc 为 1.51 mA cm(-2),填充因子为 0.449,整体光电转换效率为 0.132%。在优化条件下,用 P1 染料敏化的 CuCr0.9Mg0.1O2 染料光电阴极,开路电压(Voc)为 201 mV,Jsc 为 1.51 mA cm(-2),填充因子为 0.449,整体光电转换效率为 0.132%。这一效率几乎是基于 NiO 的参考器件的三倍,这归因于 Voc 和 Jsc 的显著提高。Voc 和 Jsc 的增强可归因于 CuCr0.9Mg0.1O2 相比 NiO 参考材料具有较低的价带位置和更快的空穴扩散系数,从而导致更高的空穴收集效率。

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