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在任意导电基底上,氧化石墨烯自发还原并组装成三维石墨烯网络。

Spontaneous reduction and assembly of graphene oxide into three-dimensional graphene network on arbitrary conductive substrates.

机构信息

Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China.

出版信息

Sci Rep. 2013;3:2065. doi: 10.1038/srep02065.

DOI:10.1038/srep02065
PMID:23799368
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3691888/
Abstract

Chemical reduction of graphene oxide (GO) is the main route to produce the mass graphene-based materials with tailored surface chemistry and functions. However, the toxic reducing circumstances, multiple steps, and even incomplete removal of the oxygen-containing groups were involved, and the produced graphenes existed usually as the assembly-absent precipitates. Herein, a substrate-assisted reduction and assembly of GO (SARA-GO) method was developed for spontaneous formation of 3D graphene network on arbitrary conductive substrates including active and inert metals, semiconducting Si, nonmetallic carbon, and even indium-tin oxide glass without any additional reducing agents. The SARA-GO process offers a facile, efficient approach for constructing unique graphene assemblies such as microtubes, multi-channel networks, micropatterns, and allows the fabrication of high-performance binder-free rechargeable lithium-ion batteries. The versatile SARD-GO method significantly improves the processablity of graphenes, which could thus benefit many important applications in sensors and energy-related devices.

摘要

化学还原氧化石墨烯(GO)是制备具有特定表面化学和功能的大规模石墨烯基材料的主要途径。然而,该方法涉及有毒的还原环境、多步反应,甚至含氧基团的不完全去除,而且所制备的石墨烯通常以无组装的沉淀物形式存在。在此,开发了一种基底辅助还原和组装氧化石墨烯(SARA-GO)的方法,可在包括活性和惰性金属、半导体 Si、非金属碳,甚至氧化铟锡玻璃在内的任意导电基底上自发形成 3D 石墨烯网络,而无需任何额外的还原剂。SARA-GO 工艺为构建独特的石墨烯组装体(如微管、多通道网络、微图案)提供了一种简便、高效的方法,并允许制造高性能无粘结剂可再充电锂离子电池。多功能的 SARD-GO 方法显著提高了石墨烯的加工性能,从而有利于在传感器和能源相关器件等许多重要应用中发挥作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/70e905f1c787/srep02065-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/b266a38eae1a/srep02065-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/afa1b18f9892/srep02065-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/a2f927cfff76/srep02065-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/31aef98f4971/srep02065-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/e1a709e0e513/srep02065-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/70e905f1c787/srep02065-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/b266a38eae1a/srep02065-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/afa1b18f9892/srep02065-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/a2f927cfff76/srep02065-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/31aef98f4971/srep02065-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/e1a709e0e513/srep02065-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/77a9/3691888/70e905f1c787/srep02065-f6.jpg

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