Thanapitak Surachoke, Toumazou Christofer
Division of Electrical and Electronic Engineering, Imperial College London, London SW7 2AZ, UK.
IEEE Trans Biomed Circuits Syst. 2013 Jun;7(3):296-306. doi: 10.1109/TBCAS.2012.2202494.
Implementation of the current mode CMOS circuit for chemical synapses (AMPA and NMDA receptors) with dynamic change of glutamate as the neurotransmitter input is presented in this paper. Additionally, circuit realisation for receptor GABA(A) and GABA(B) with an electrical signal which symbolises γ-Aminobutyric Acid (GABA) perturbation is introduced. The chemical sensor for glutamate sensing is the modified ISFET with enzyme (glutamate oxidase) immobilisation. The measured results from these biomimetics chemical synapse circuits closely match with the simulation result from the mathematical model. The total power consumption of the whole chip (four chemical synapse circuits and all auxiliary circuits) is 168.3 μW. The total chip area is 3 mm(2) in 0.35-μm AMS CMOS technology.
本文介绍了用于化学突触(AMPA和NMDA受体)的电流模式CMOS电路的实现,该电路以动态变化的谷氨酸作为神经递质输入。此外,还介绍了用于GABA(A)和GABA(B)受体的电路实现,其用电信号表示γ-氨基丁酸(GABA)扰动。用于检测谷氨酸的化学传感器是固定有酶(谷氨酸氧化酶)的改良离子敏感场效应晶体管。这些仿生化学突触电路的测量结果与数学模型的模拟结果紧密匹配。整个芯片(四个化学突触电路和所有辅助电路)的总功耗为168.3μW。采用0.35μm AMS CMOS技术时,芯片总面积为3mm²。