Kwak Kiyeol, Cho Kyoungah, Kim Sangsig
Department of Electrical Engineering, Korea University, Seoul 137-701, Korea.
J Nanosci Nanotechnol. 2013 May;13(5):3433-6. doi: 10.1166/jnn.2013.7237.
In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW.
在本研究中，我们在SiO2（300纳米）/Si衬底上制备了由Cu2O纳米颗粒（NP）薄膜和单个ZnO纳米线（NW）组成的平面pn异质结二极管，并研究了它们在黑暗中以及在白光和325纳米波长光照射下的特性。该二极管在±1 V偏置电压下，整流比在黑暗中为10，在白光照射下为34。另一方面，暴露于325纳米波长光的二极管表现出欧姆特性，这与Cu2O NP薄膜和单个ZnO纳米线中高效的光电流产生有关。
