Hewlett-Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA; Stanford University, Stanford, CA, 94305, USA.
Adv Mater. 2013 Nov 13;25(42):6128-32. doi: 10.1002/adma.201302046. Epub 2013 Jul 19.
Joule-heating induced conductance-switching is studied in VO2 , a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.
我们研究了 Mott 绝缘体 VO2 中的焦耳加热诱导的电导开关。使用了互补的原位技术，包括光学特性、黑体显微镜、扫描透射 X 射线显微镜 (STXM) 和数值模拟。结果表明，在电导开关和结构相变的同时，会发生局部温度的急剧重新分布，而这一过程发生在相同的电流下。
