Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan.
Ultramicroscopy. 2013 Dec;135:64-70. doi: 10.1016/j.ultramic.2013.05.011. Epub 2013 May 28.
The minimum detection limit and spatial resolution for a thinned semiconductor sample were determined by electron probe microanalysis (EPMA) using a Schottky field emission (FE) electron gun and wavelength dispersive X-ray spectrometry. Comparison of the FE-EPMA results with those obtained using energy dispersive X-ray spectrometry in conjunction with scanning transmission electron microscopy, confirmed that FE-EPMA is largely superior in terms of detection sensitivity. Thin-sample FE-EPMA is demonstrated as a very effective method for high resolution, high sensitivity analysis in a laboratory environment because a high probe current and high signal-to-noise ratio can be achieved.
使用肖特基场发射（FE）电子枪和波长色散 X 射线光谱仪，通过电子探针微分析（EPMA）确定了半导体薄样品的最小检测限和空间分辨率。FE-EPMA 的结果与结合扫描透射电子显微镜使用能量色散 X 射线光谱法获得的结果进行了比较，证实 FE-EPMA 在检测灵敏度方面具有很大的优势。薄样品 FE-EPMA 是一种在实验室环境中进行高分辨率、高灵敏度分析的非常有效的方法，因为可以实现高探针电流和高信噪比。
