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基于印刷聚合物半导体纳条纹的逻辑门器件。

Logic-gate devices based on printed polymer semiconducting nanostripes.

机构信息

Consiglio Nazionale delle Ricerche, Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), Bologna, Italy.

出版信息

Nano Lett. 2013 Aug 14;13(8):3643-7. doi: 10.1021/nl401484x. Epub 2013 Jul 25.

DOI:10.1021/nl401484x
PMID:23879239
Abstract

The applications of organic semiconductors in complex circuitry such as printed CMOS-like logic circuits demand miniaturization of the active structures to the submicrometric and nanoscale level while enhancing or at least preserving the charge transport properties upon processing. Here, we addressed this issue by using a wet lithographic technique, which exploits and enhances the molecular order in polymers by spatial confinement, to fabricate ambipolar organic field effect transistors and inverter circuits based on nanostructured single component ambipolar polymeric semiconductor. In our devices, the current flows through a precisely defined array of nanostripes made of a highly ordered diketopyrrolopyrrole-benzothiadiazole copolymer with high charge carrier mobility (1.45 cm(2) V(-1) s(-1) for electrons and 0.70 cm(2) V(-1) s(-1) for holes). Finally, we demonstrated the functionality of the ambipolar nanostripe transistors by assembling them into an inverter circuit that exhibits a gain (105) comparable to inverters based on single crystal semiconductors.

摘要

有机半导体在复杂电路(如印刷 CMOS 类似逻辑电路)中的应用要求将有源结构小型化到亚微米和纳米尺度,同时在加工过程中增强或至少保持电荷输运性能。在这里,我们通过使用湿光刻技术解决了这个问题,该技术通过空间限制来利用和增强聚合物中的分子有序性,从而制造基于纳米结构单组分双极性聚合物半导体的双极有机场效应晶体管和逆变器电路。在我们的器件中,电流通过由具有高电荷载流子迁移率(电子为 1.45 cm(2) V(-1) s(-1),空穴为 0.70 cm(2) V(-1) s(-1))的高度有序二酮吡咯并吡咯-苯并噻二唑共聚物制成的精确定义的纳米条纹阵列流动。最后,我们通过将双极纳米条纹晶体管组装成逆变器电路来证明其功能,该电路的增益(105)可与基于单晶半导体的逆变器相媲美。

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