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二丁基C6 - BTBT的多晶型筛选及电荷传输研究

Polymorph Screening and Investigation of Charge Transport of ditBuC6-BTBT.

作者信息

Pandey Priya, Modesti Federico, McIntosh Nemo, Ruzié Christian, Turetta Nicholas, Fijahi Lamiaa, Remigio Massimiliano, Schweicher Guillaume, Geerts Yves Henri, Mas-Torrent Marta, Erk Peter, Cornil Jérôme, Samorì Paolo, Modena Enrico, Maini Lucia

机构信息

PolyCrystalLine SPA, Via Della Cooperazione, Medicina, 29 40059 Bologna, Italy.

Dipartimento di Chimica "G. Ciamician", via Selmi 2Università di Bologna, I-40126 Bologna, Italy.

出版信息

Cryst Growth Des. 2025 Jun 3;25(12):4214-4229. doi: 10.1021/acs.cgd.5c00046. eCollection 2025 Jun 18.

Abstract

In this study, we investigate the relationship between the polymorphism and crystallographic parameters and the charge transport properties achieved through the fabrication of organic field-effect transistors (OFETs) based on a novel molecular semiconductor, i.e., 2,7-bis-(7,7-dimethyloctyl)-benzo-[]-benzo-[4,5]-thieno-[2,3-]-thiophene (ditBuC6-BTBT). Four polymorphs of ditBuC6-BTBT were identified: three observed at room temperature (Forms I, Ia, and II), and one appearing above 100 °C (Form III). While cell parameters were measured for all forms, full crystal structures were determined only for Forms Ia and II. Although a direct correlation between molecular packing and charge transport properties could not be established from the present study, the structural analysis of the polymorphs contributes to a broader understanding of the packing motifs in ditBuC6-BTBT. A meticulous examination of the minute discrepancies in the powder patterns substantiated the existence of both the metastable Form I and Form Ia, which became more difficult to isolate due to unintentional seeding of the thermodynamically stable Form II. Nonequilibrium crystallization techniques utilizing thermal gradient and bar-assisted meniscus shearing methods were explored to enhance control over polymorph selection. The intrinsic charge transport properties ruled by the overlap of the frontier orbitals were studied by computing the transfer integrals. Optimized devices fabricated by depositing thin films by solution shearing and vacuum evaporation led to field-effect mobility in the linear regime of ca. 0.05 cm V s. The observed device performances were interpreted as a result of the combined effects of crystal packing features, ionization potential values, and polymorphic coexistence, highlighting the challenges in deriving clear structure-property correlations and underscoring the complexities in achieving high-performance organic electronics with this material.

摘要

在本研究中,我们通过制备基于新型分子半导体2,7-双-(7,7-二甲基辛基)-苯并[1,2-b:4,5-b']二噻吩(ditBuC6-BTBT)的有机场效应晶体管(OFET),研究了多晶型与晶体学参数以及电荷传输性质之间的关系。鉴定出了ditBuC6-BTBT的四种多晶型:三种在室温下观察到(I型、Ia型和II型),一种在100℃以上出现(III型)。虽然测量了所有晶型的晶胞参数,但仅确定了Ia型和II型的完整晶体结构。尽管从本研究中无法建立分子堆积与电荷传输性质之间的直接关联,但多晶型的结构分析有助于更广泛地理解ditBuC6-BTBT中的堆积模式。对粉末衍射图谱中细微差异的细致检查证实了亚稳I型和Ia型的存在,由于热力学稳定的II型的无意晶种生长,它们变得更难分离。探索了利用热梯度和棒辅助弯月面剪切方法的非平衡结晶技术,以增强对多晶型选择的控制。通过计算转移积分研究了由前沿轨道重叠决定的本征电荷传输性质。通过溶液剪切和真空蒸发沉积薄膜制备的优化器件在约0.05 cm² V⁻¹ s⁻¹的线性区域产生了场效应迁移率。观察到的器件性能被解释为晶体堆积特征、电离势值和多晶型共存的综合作用的结果,突出了推导清晰的结构-性质关联的挑战,并强调了用这种材料实现高性能有机电子器件的复杂性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c09/12186265/779201b89a3b/cg5c00046_0001.jpg

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