Mescher Marleen, de Smet Louis C P M, Sudhölter Ernst J R, Klootwijk Johan H
Materials innovation institute M2i, PO Box 5008, 2600 GA Delft, The Netherlands.
J Nanosci Nanotechnol. 2013 Aug;13(8):5649-53. doi: 10.1166/jnn.2013.7548.
This paper demonstrates a new method for the top-down production of silicon nanowire field effect transistors for sensing applications. A simple and robust method for the fabrication of these devices is described, using only conventional CMOS (Complementary Metal Oxide Semiconductor) processing techniques making it manufacturable on large scale in a broad range of production facilities. Moreover, the process is flexible in terms of the choice of the type of front oxide of the transistor, as it is applied in a separate, independent step from the application of the surrounding oxide. In case ultimate small dimensions are required that go beyond the wafer stepper resolution, the use of e-beam technology to produce even smaller structures can be easily integrated. Furthermore, the use of a passivation layer opens possibilities for adding selectivity via surface modification on silicon dioxide and silicon. After a detailed description of the process, the electrical characteristics of the devices are shown together with data on the device reliability, indicating that the process is easy to manufacture, has a large yield and results in sensor devices with electrical characteristics in the desired regime.
本文展示了一种用于传感应用的自上而下生产硅纳米线场效应晶体管的新方法。描述了一种用于制造这些器件的简单且稳健的方法，该方法仅使用传统的CMOS（互补金属氧化物半导体）加工技术，使其能够在广泛的生产设施中大规模制造。此外，该工艺在晶体管前氧化物类型的选择方面具有灵活性，因为它是在与周围氧化物施加分开的独立步骤中应用的。如果需要超出晶圆步进光刻机分辨率的极小尺寸，可以轻松集成电子束技术以生产更小的结构。此外，钝化层的使用为通过二氧化硅和硅表面改性增加选择性开辟了可能性。在详细描述该工艺之后，展示了器件的电学特性以及器件可靠性数据，表明该工艺易于制造，良率高，并且能生产出具有所需电学特性的传感器器件。
