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室温下大规模合成高度结晶的 SnO₂量子点及其高电化学性能。

Large scale synthesis of highly crystallized SnO₂ quantum dots at room temperature and their high electrochemical performance.

机构信息

Shandong Provincial Engineering Research Center for Light Hydrocarbon Comprehensive Utilization, College of Chemistry and Chemical Engineering, Yantai University, 264005 Yantai, People's Republic of China.

出版信息

Nanotechnology. 2013 Aug 30;24(34):345602. doi: 10.1088/0957-4484/24/34/345602. Epub 2013 Jul 30.

Abstract

In this work, SnO2 quantum dots with high crystallinity were synthesized on a large scale under mild reaction conditions via an epoxide precipitation route. The SnO intermediate, which was produced in the reactions between epoxide and Sn(H2O)6, was converted to SnO2 quantum dots by the oxidation of H2O2. It is believed that the protonation and the following ring opening of epoxide promoted the hydrolysis and condensation of Sn(H2O)6 to form the intermediate. The obtained quantum dots had a maximum specific capacitance of 204.4 F g(-1) at a scan rate of 5 mV s(-1) in 1 mol l(-1) KOH aqueous solution. The electrochemical measurements proved that this high specific capacitance of SnO2 resulted from the Faradaic reactions between SnO2 and the electrolyte. This demonstrates for the first time that SnO2 can be used as a pseudocapacitive electrode material.

摘要

在这项工作中,通过环氧化物沉淀法在温和的反应条件下大规模合成了具有高结晶度的 SnO2 量子点。SnO 中间体是在环氧化物和 Sn(H2O)6之间的反应中产生的,然后通过 H2O2 的氧化转化为 SnO2 量子点。据信,环氧化物的质子化和随后的开环促进了 Sn(H2O)6的水解和缩合,形成了中间体。在 1 mol l(-1) KOH 水溶液中,以 5 mV s(-1)的扫描速率,所获得的量子点具有 204.4 F g(-1)的最大比电容。电化学测量证明,SnO2 的这种高比电容源于 SnO2 和电解质之间的法拉第反应。这首次证明了 SnO2 可用作赝电容电极材料。

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