注意：一种用于在超高真空环境下制造用于电导率测量的微观四点探针的简单方法。

Note: a simple approach to fabricate a microscopic four-point probe for conductivity measurements in ultrahigh vacuum.

作者信息

Pang Fei, Liang Xuejin, Chen Dongmin

机构信息

Department of Physics, Renmin University of China, Beijing 100872, China.

出版信息

Rev Sci Instrum. 2013 Jul;84(7):076104. doi: 10.1063/1.4816536.

DOI:10.1063/1.4816536

PMID:23902121

Abstract

We present a simple method to fabricate microscopic four-point probe (M4PP) with spacing of 70-100 μm for conductivity measurements in ultrahigh vacuum. The probe includes four gold wires with 30 μm diameter and a 0.5 mm thickness sapphire slice as cantilever. One of the dual scanning tunneling microscope (DSTM) is replaced by M4PP. As a result, in situ transport measurement could be performed by M4PP and investigation of surface morphology by STM. Finally, we measure conductivity of 14 monolayer Bi(111) epitaxial film on n type Si which is 1.6 × 10(-3) Ω(-1)∕[larger open square].

摘要

我们提出了一种简单的方法来制造间距为70 - 100μm的微观四点探针（M4PP），用于超高真空环境下的电导率测量。该探针包括四根直径为30μm的金线和一片厚度为0.5mm的蓝宝石片作为悬臂。双扫描隧道显微镜（DSTM）中的一个被M4PP取代。因此，M4PP可用于原位输运测量，而STM则用于表面形貌研究。最后，我们测量了n型硅上14单层Bi(111)外延膜的电导率，其值为1.6×10⁻³Ω⁻¹/[大正方形] 。