Department of Electrical Engineering , Columbia University , New York, New York 10027, United States.
Nano Lett. 2013 Sep 11;13(9):4275-9. doi: 10.1021/nl4020414. Epub 2013 Aug 23.
High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.
高应力化学计量比氮化硅谐振器的品质因数超过一百万，有望应用于传感、信号处理和光机械等领域。然而，绝缘氮化硅谐振器的电集成一直具有挑战性，因为即使沉积很薄的金属层也会显著降低品质因数。在这项工作中，我们表明，用于 Si3N4 膜的石墨烯作为导电涂层，其品质因数的平均降低幅度小于 30%，与传统的金属化层（如铬或铝）相比，这一影响可以忽略不计。通过高达 0.3%/伏特的电压实现了 Si3N4-石墨烯（SiNG）异质结构谐振器的电集成，并进行了电读取和静电频率调谐。这些研究证明了混合石墨烯/氮化物机械谐振器的可行性，其中石墨烯的电学性能与氮化硅的卓越机械性能相结合。
