Li Qing, Eftekhar Ali A, Sodagar Majid, Xia Zhixuan, Atabaki Amir H, Adibi Ali
School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA 30332, USA.
Opt Express. 2013 Jul 29;21(15):18236-48. doi: 10.1364/OE.21.018236.
We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).
我们展示了将高Q值的氮化硅微谐振器垂直集成到绝缘体上硅平台中，用于电信波长的应用。成功生长了厚度为400 nm的低损耗氮化硅薄膜，从而实现了具有超高本征品质因数（对于半径60μm约为6×10⁶，对于半径240μm约为2×10⁷）的紧凑型氮化硅微谐振器。氮化硅微谐振器与下方硅波导之间的耦合基于以二氧化硅为缓冲层的倏逝耦合。使用滑轮耦合方案也可以实现与氮化硅微谐振器所需径向模式的选择性耦合。在这项工作中，一个半径为60μm的氮化硅微谐振器已成功集成到绝缘体上硅平台中，显示出具有2×10⁶本征品质因数的单模运行。
