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溶液处理氧化钨界面层用于提高量子点发光二极管空穴注入效率。

Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.

机构信息

Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore.

出版信息

Small. 2014 Jan 29;10(2):247-52. doi: 10.1002/smll.201301199. Epub 2013 Aug 5.

Abstract

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.

摘要

本文展示了一种使用无机 WO3 纳米粒子薄膜作为空穴注入层的高效稳定 QLED。与目前基于 PEDOT:PSS 的 QLED 相比,所得到的基于 WO3 纳米粒子的 QLED 也表现出优异的性能。结果表明,WO3 纳米粒子是很有前途的溶液处理缓冲层材料,是下一代照明和显示应用中 QLED 技术的有力候选材料。

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