LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, ‡School of Physical and Mathematical Sciences, and §School of Mechanical and Aerospace Engineering, Nanyang Technological University , Nanyang Avenue, Singapore 639798.
ACS Appl Mater Interfaces. 2014 Jan 8;6(1):495-9. doi: 10.1021/am404540z. Epub 2013 Dec 13.
An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.
制备了一种高效稳定的量子点发光二极管（QLED），采用双面金属氧化物（MO）纳米颗粒（NP）电荷传输层，其中利用溶液处理的氧化钨（WO3）和氧化锌（ZnO）NP 分别作为空穴和电子传输层。除了电极，所有其他层都通过简单的旋涂方法沉积。所得的基于 MO NP 的 QLED 表现出优异的器件性能，在 516nm 的发射波长下，峰值亮度为 21300cd/m²，最大电流效率为 4.4cd/A，开启电压低至 3V。更重要的是，通过对器件结构的有效设计，这些器件的稳定性得到显著提高，在室温下测量的工作寿命可达 95h，几乎是标准器件的 20 倍。
