Rodrigues Gabriela Ribeiro Ivo, Ramos Natália, Lewis Doris Ruthi
School of Speech-Language Pathology and Audiology, Pontifícia Universidade Católica de São Paulo - PUC-SP, São Paulo, SP, Brazil.
Int J Pediatr Otorhinolaryngol. 2013 Sep;77(9):1555-60. doi: 10.1016/j.ijporl.2013.07.003. Epub 2013 Aug 1.
The difference of characteristics (latency and amplitude) between toneburst and narrow CE-chirp stimuli on ABR recording was analyzed in normal hearing infants.
500, 1000, 2000 and 4000 Hz toneburst and narrow band CE-chirp auditory brainstem responses (ABRs) were recorded in 40 normal-hearing infants. The amplitude and latency parameters of the ABR were collected for each of the four stimulus levels: 80, 60, 40, and 20 dB nHL. Both stimuli started from 80 dB nHL using alternating polarity and the rates were both 27.1/s.
The toneburst latencies are greater than narrow band CE-chirp latencies for all intensities at 500, 1000 and 2000 Hz (p < 0.001). However, at 4000 Hz this difference was not significant. At 500 Hz, wave V amplitude is larger for toneburst than narrow CE-chirp (p < 0.001) in 80 dB nHL. The difference between the two stimuli in 60 dB nHL was not significant (p = 0.495) and at 40 and 20 dB nHL the wave V narrow band CE-chirp amplitude is greater than toneburst amplitude (p < 0.001). At 1000, 2000 and 4000 Hz there is no difference between the wave V toneburst and narrow band CE-chirp amplitudes at 80 dB nHL (p = 0.940; p = 0.776 and p = 0.217 respectively). On the other hand, in the levels to 60, 40 and 20 dB nHL, narrow band CE-chirp amplitudes are larger than toneburst amplitude (p < 0.001).
Narrow band CE-chirp ABRs generates shorter latencies than the toneburst ABRs, especially to low frequencies. Higher amplitudes were found with narrow band CE-chirp stimuli for all frequencies tested, except to high levels.
分析正常听力婴儿听性脑干反应(ABR)记录中短纯音与窄带CE-啁啾刺激在特征(潜伏期和波幅)上的差异。
对40例正常听力婴儿记录500、1000、2000和4000Hz短纯音及窄带CE-啁啾听性脑干反应(ABR)。在80、60、40和20dB nHL这四个刺激强度水平下收集ABR的波幅和潜伏期参数。两种刺激均从80dB nHL开始,采用交替极性,速率均为27.1次/秒。
在500、1000和2000Hz的所有强度下,短纯音的潜伏期均长于窄带CE-啁啾的潜伏期(p<0.001)。然而,在4000Hz时,这种差异不显著。在500Hz时,80dB nHL下短纯音的V波波幅大于窄带CE-啁啾(p<0.001)。在60dB nHL时两种刺激之间的差异不显著(p = 0.495),在40和20dB nHL时,窄带CE-啁啾的V波波幅大于短纯音波幅(p<0.001)。在1000、2000和4000Hz时,80dB nHL下短纯音和窄带CE-啁啾的V波波幅无差异(分别为p = 0.940;p = 0.776和p = 0.217)。另一方面,在60、40和20dB nHL水平下,窄带CE-啁啾的波幅大于短纯音波幅(p<0.001)。
窄带CE-啁啾ABR产生的潜伏期比短纯音ABR短,尤其是在低频时。除高强度外,在所有测试频率下窄带CE-啁啾刺激的波幅更高。