Cardenas Jaime, Zhang Mian, Phare Christopher T, Shah Shreyas Y, Poitras Carl B, Guha Biswajeet, Lipson Michal
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Opt Express. 2013 Jul 15;21(14):16882-7. doi: 10.1364/OE.21.016882.
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.
我们展示了基于在硅上外延生长的标准3C-SiC的光子器件。通过利用SiC的高硬度并对下面的硅衬底进行蚀刻，我们实现了高光限制。我们展示了一个半径为20μm、品质因数Q = 14100的悬浮微环谐振器，它是在市售的硅基SiC衬底上制造的。
