Preu S, Mittendorff M, Winnerl S, Lu H, Gossard A C, Weber H B
Univ. of Erlangen-Nuremberg, Germany.
Opt Express. 2013 Jul 29;21(15):17941-50. doi: 10.1364/OE.21.017941.
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65±3dB/Hz, enabling applications in a large variety of experiments and setups, also including table-top systems.
一整类双色实验涉及高强度、短太赫兹辐射脉冲。非常需要一种能够同时分辨近红外和太赫兹脉冲的快速且中等灵敏度的探测器。在此，我们展示了首款此类探测器。探测器元件是一个基于砷化镓的场效应晶体管，在室温下工作。已成功在高达4.9太赫兹的频率下演示了太赫兹探测。太赫兹探测时间常数短于30皮秒，光学时间常数为150皮秒。该探测器非常适合精确、同时分辨光脉冲和太赫兹脉冲，以及对高达数十千瓦峰值功率水平的高功率太赫兹脉冲进行脉冲表征。探测器的动态范围高达65±3分贝/赫兹，适用于各种实验和装置，包括桌面系统。
