Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystraße 10, D-91058, Erlangen, Germany.
Nanotechnology. 2013 Sep 13;24(36):365302. doi: 10.1088/0957-4484/24/36/365302. Epub 2013 Aug 13.
This paper presents an alternative rapid prototyping approach for the fabrication of stamps for UV nanoimprint lithography. In this process, areas implanted with gallium serve as an etch mask for the dry etching of quartz. The implantation is performed using a focused ion beam system. To avoid charging of the quartz substrate the use of thin layers of chromium or carbon on the quartz substrate has been evaluated. The resulting quartz structures exhibit very smooth surfaces after dry etching, if the implantation dose is high enough to form a stable etch mask. Furthermore, anisotropic etching could be realized by optimization of a quartz etching process involving C₄F₈ and O₂ after the use of resistless Ga(+) beam lithography. Finally, imprints into a UV curing resist are performed successfully with the manufactured stamps, proving that the presence of Ga rich areas on the stamp is not detrimental to the curing of the resist or the functionality of the anti-sticking layer.
本文提出了一种用于制造紫外纳米压印光刻用模具的替代快速原型制作方法。在这个过程中，植入镓的区域作为石英的干法刻蚀的掩模。植入是使用聚焦离子束系统完成的。为了避免石英衬底的充电，已经评估了在石英衬底上使用铬或碳的薄层。如果植入剂量足够高以形成稳定的掩模，则在干法刻蚀后，所得的石英结构具有非常光滑的表面。此外，通过优化涉及 C₄F₈和 O₂的石英蚀刻工艺，在使用无抗蚀剂 Ga(+)束光刻之后，可以实现各向异性蚀刻。最后，用制造的模具成功地对 UV 固化胶进行了压印，证明模具上存在富 Ga 区域不会对胶的固化或防粘层的功能造成损害。
