1] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
Nat Commun. 2013;4:2322. doi: 10.1038/ncomms3322.
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperature-exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
最近的研究表明，反铁磁体作为自旋电子器件的活性组件具有潜力。与它们目前在硬盘读取头和磁存储器中作为钉扎层的被动作用形成对比。在这里，我们报告了一种新的高温反铁磁材料四方 CuMnAs 的外延生长，该材料表现出优异的晶体质量、化学有序性和与现有半导体技术的兼容性。我们证明了它在 III-V 半导体 GaAs 和 GaP 上的生长，并表明该结构与 Si 也是晶格匹配的。中子衍射显示出具有高奈尔温度的共线反铁磁序。结合我们在 CuMnAs/Fe 双层中室温交换耦合的演示，我们得出结论，四方 CuMnAs 薄膜是反铁磁自旋电子学的合适候选材料。
