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利用原子层沉积在金属氧化物表面稳定小分子。

Stabilizing small molecules on metal oxide surfaces using atomic layer deposition.

机构信息

Department of Chemistry, University of North Carolina at Chapel Hill , Chapel Hill, North Carolina 27599, United States.

出版信息

Nano Lett. 2013 Oct 9;13(10):4802-9. doi: 10.1021/nl402416s. Epub 2013 Sep 4.

Abstract

Device lifetimes and commercial viability of dye-sensitized solar cells (DSSCs) and dye-sensitized photoelectrosynthesis cells (DSPECs) are dependent on the stability of the surface bound molecular chromophores and catalysts. Maintaining the integrity of the solution-metal oxide interface is especially challenging in DSPECs for water oxidation where it is necessary to perform high numbers of turnovers, under irradiation in an aqueous environment. In this study, we describe the atomic layer deposition (ALD) of TiO2 on nanocrystalline TiO2 prefunctionalized with the dye molecule Ru(bpy)2(4,4'-(PO3H2)bpy) (RuP) as a strategy to stabilize surface bound molecules. The resulting films are over an order of magnitude more photostable than untreated films and the desorption rate constant exponentially decreases with increased thickness of ALD TiO2 overlayers. However, the injection yield for TiO2-RuP with ALD TiO2 also decreases with increasing overlayer thickness. The combination of decreased injection yield and 95% quenched emission suggests that the ALD TiO2 overlayer acts as a competitive electron acceptor from RuP*, effectively nonproductively quenching the excited state. The ALD TiO2 also increases back electron transfer rates, relative to the untreated film, but is independent of overlayer thickness. The results for TiO2-RuP with an ALD TiO2 overlayer are compared with similar films having ALD Al2O3 overlayers.

摘要

染料敏化太阳能电池 (DSSC) 和染料敏化光电化学电池 (DSPEC) 的器件寿命和商业可行性取决于表面结合的分子发色团和催化剂的稳定性。在用于水氧化的 DSPEC 中,维持溶液-金属氧化物界面的完整性特别具有挑战性,因为需要在水相环境中进行大量的循环,以进行辐照。在这项研究中,我们描述了在纳米晶 TiO2 上进行原子层沉积 (ALD) TiO2 的方法,该纳米晶 TiO2 预先用染料分子 Ru(bpy)2(4,4'-(PO3H2)bpy) (RuP) 官能化,作为稳定表面结合分子的策略。所得薄膜的光稳定性比未处理的薄膜高出一个数量级,并且随着 ALD TiO2 覆盖层厚度的增加,解吸速率常数呈指数下降。然而,对于具有 ALD TiO2 的 TiO2-RuP,注入产率也随覆盖层厚度的增加而降低。注入产率降低和 95%的猝灭发射的结合表明,ALD TiO2 覆盖层作为 RuP*的竞争性电子受体,有效地非生产性猝灭了激发态。ALD TiO2 还增加了相对于未处理膜的反向电子转移速率,但与覆盖层厚度无关。具有 ALD TiO2 覆盖层的 TiO2-RuP 的结果与具有类似 ALD Al2O3 覆盖层的类似薄膜进行了比较。

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