Hönnicke Marcelo Goncalves, Huang Xianrong, Cusatis Cesar, Koditwuakku Chaminda Nalaka, Cai Yong Q
Universidade Federal da Integração Latino-Americana , Caixa Postal 2044, Foz do Iguacu, Parana 85867-970, Brazil.
J Appl Crystallogr. 2013 Aug 1;46(Pt 4):939-944. doi: 10.1107/S0021889813004731. Epub 2013 Jun 7.
Spherical analyzers are well known instruments for inelastic X-ray scattering (IXS) experiments. High-resolution IXS experiments almost always use Si single crystals as monochromators and spherical analyzers. At higher energies (>20 keV) Si shows a high energy resolution (<10 meV), at an exact symmetric back-diffraction condition, since the energy resolution is given by the real part of the susceptibility or polarizability. However, at low energies (<10 keV), high energy resolution is difficult to achieve with Si. α-SiO (quartz) can be an option, since it offers high energy resolution at low energies. In this work, the characterization of high-quality α-SiO is presented. Such characterization is made by high-resolution rocking curve, topography and lattice parameter mapping in different samples from a single block. X-ray optics with α-SiO for IXS at lower energies (from 2.5 to 12.6 keV) with medium to high energy resolution (from 90 to 11 meV) are proposed and theoretically exploited.
球形分析仪是用于非弹性X射线散射（IXS）实验的知名仪器。高分辨率IXS实验几乎总是使用硅单晶作为单色仪和球形分析仪。在较高能量（>20 keV）下，在精确的对称背散射条件下，硅显示出高能量分辨率（<10 meV），因为能量分辨率由磁化率或极化率的实部给出。然而，在低能量（<10 keV）下，用硅很难实现高能量分辨率。α-二氧化硅（石英）可以是一种选择，因为它在低能量下提供高能量分辨率。在这项工作中，展示了高质量α-二氧化硅的表征。这种表征是通过对来自单个块体的不同样品进行高分辨率摇摆曲线、形貌和晶格参数映射来完成的。提出并从理论上研究了用于较低能量（2.5至12.6 keV）、具有中等到高能量分辨率（90至11 meV）的IXS的带有α-二氧化硅的X射线光学器件。
