Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong.
Nanoscale. 2013 Nov 7;5(21):10376-83. doi: 10.1039/c3nr02635c. Epub 2013 Sep 12.
A configuration of three-dimensional Ni-Si nanocable array anodes is proposed to overcome the severe volume change problem of Si during the charging-discharging process. In the fabrication process, a simple and low cost electrodeposition is employed to deposit Si instead of the common expansive vapor phase deposition methods. The optimum composite nanocable array electrode achieves a high specific capacity 1900 mA h g(-1) at 0.05 C. After 100 cycles at 0.5 C, 88% of the initial capacity (1300 mA h g(-1)) remains, suggesting its good capacity retention ability. The high performance of the composite nanocable electrode is attributed to its excellent adhesion of the active material on the three-dimensional current collector and short ionic/electronic transport pathways during cycling.
提出了一种三维 Ni-Si 纳米电缆阵列阳极结构，以克服硅在充放电过程中的严重体积变化问题。在制造过程中，采用简单且低成本的电沉积法来沉积硅，而不是采用常见的膨胀气相沉积方法。最佳的复合纳米电缆阵列电极在 0.05 C 时具有高达 1900 mA h g(-1)的比容量。在 0.5 C 下循环 100 次后，仍保持 88%的初始容量（~1300 mA h g(-1)），表明其具有良好的容量保持能力。复合纳米电缆电极的高性能归因于其在循环过程中活性材料在三维集流器上的优异附着力和短的离子/电子传输路径。
