Instituto de Física, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, 91501-970 Rio Grande do Sul, Brazil.
J Phys Condens Matter. 2013 Oct 23;25(42):426001. doi: 10.1088/0953-8984/25/42/426001. Epub 2013 Sep 24.
This paper reports experimental and model magnetization results obtained on exchange-coupled ferromagnet/antiferromagnet (FM/AF) bilayers that show zero net bias. The coercivity of the films, either irradiated with He or implanted with Ge ions at 40 keV, varies significantly with the fluence used. We employed the remanence plots technique in order to estimate the nature of the interactions present and check if there exists a correlation between their type and the coercivity variations. The analysis of the remanence plots through numerical simulations based on the Landau-Lifshitz-Gilbert equation demonstrated that outcomes of interactions within the FM layer could be distinguished from those coming from coupling at the FM/AF interface and that demagnetizing interaction effects could be achieved without the presence of dipolar interactions. Our findings indicate that such experiments could give selective information on modifications caused by a post-deposition treatment in each layer of the film.
本文报告了在交换耦合铁磁体/反铁磁体（FM/AF）双层膜上获得的实验和模型磁化结果，这些结果显示出零净偏置。无论是用氦气辐照还是用 40keV 的 Ge 离子注入，薄膜的矫顽力都随使用的通量显著变化。我们采用剩磁图技术来估计存在的相互作用的性质，并检查它们的类型与矫顽力变化之间是否存在相关性。通过基于 Landau-Lifshitz-Gilbert 方程的数值模拟对剩磁图进行分析表明，FM 层内相互作用的结果可以与来自 FM/AF 界面耦合的结果区分开来，并且可以在没有偶极相互作用的情况下实现退磁相互作用效应。我们的发现表明，这种实验可以在不影响薄膜各层沉积后处理的情况下，提供选择性的信息。
