SKKU Advanced Institute of Nanotechnology (SAINT), ‡School of Advanced Materials Science and Engineering, and §School of Chemical Engineering, Sungkyunkwan University , Suwon, 440-746, Republic of Korea.
Nano Lett. 2013;13(11):5600-7. doi: 10.1021/nl403251e. Epub 2013 Oct 10.
Two dimensional (2D) semiconductors have attracted attention for a range of electronic applications, such as transparent, flexible field effect transistors and sensors owing to their good optical transparency and mechanical flexibility. Efforts to exploit 2D semiconductors in electronics are hampered, however, by the lack of efficient methods for their synthesis at levels of quality, uniformity, and reliability needed for practical applications. Here, as an alternative 2D semiconductor, we study single crystal Si nanomembranes (NMs), formed in large area sheets with precisely defined thicknesses ranging from 1.4 to 10 nm. These Si NMs exhibit electronic properties of two-dimensional quantum wells and offer exceptionally high optical transparency and low flexural rigidity. Deterministic assembly techniques allow integration of these materials into unusual device architectures, including field effect transistors with total thicknesses of less than 12 nm, for potential use in transparent, flexible, and stretchable forms of electronics.
二维（2D）半导体因其良好的光学透明度和机械柔韧性而在透明、灵活的场效应晶体管和传感器等一系列电子应用中受到关注。然而，由于缺乏高效的合成方法，无法达到实际应用所需的质量、均匀性和可靠性水平，因此在电子学中利用二维半导体的努力受到了阻碍。在这里，我们研究了单晶硅纳米膜（NM）作为替代二维半导体，这些 NM 以大面积片的形式形成，具有精确定义的厚度，范围从 1.4 到 10nm。这些 Si NM 表现出二维量子阱的电子特性，并提供极高的光学透明度和低弯曲刚度。确定性组装技术允许将这些材料集成到不同寻常的器件架构中，包括总厚度小于 12nm 的场效应晶体管，可潜在用于透明、灵活和可伸缩形式的电子设备。
