Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA.
Department of Chemistry, University of Chicago, Chicago, Illinois 60637, USA.
Nature. 2017 Oct 12;550(7675):229-233. doi: 10.1038/nature23905. Epub 2017 Sep 20.
High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.
具有原子级精度垂直组成的高性能半导体薄膜为现代集成电路和新型材料发现提供了基础。实现这种薄膜的一种方法是顺序逐层组装,其中原子级薄的二维构建块垂直堆叠,并通过范德华相互作用保持在一起。通过这种方法,石墨烯和过渡金属二卤化物-分别代表一和三原子厚的二维构建块-已被用于实现具有有趣物理性质的以前无法获得的异质结构。然而,目前没有现有的大规模组装方法可以在保持这些二维构建块固有特性的同时产生原始的层间界面,从而将逐层组装方法限制在小规模的概念验证演示中。在这里,我们报告了使用真空下二维构建块的逐层组装生成具有非常高水平空间均匀性和原始界面的晶圆级半导体薄膜。这些薄膜的垂直组成和性质是使用原子层设计的,通过真空下的二维构建块逐层组装而成。我们制造了几种大规模、高质量的异质结构薄膜和器件,包括具有垂直组成的超晶格薄膜、可在四个数量级范围内调节电阻的批量制造隧道器件阵列、能带工程异质结构隧道二极管以及毫米级超薄膜和窗口。堆叠的薄膜是可分离的、可悬挂的,并且与水或塑料表面兼容,这将使它们能够与先进的光学和机械系统集成。