Department of Materials Science and Engineering, Northwestern University , 2220 Campus Dr., Evanston, Illinois 60208, United States.
Nano Lett. 2013 Nov 13;13(11):5123-8. doi: 10.1021/nl402331u. Epub 2013 Oct 14.
GaN-InGaN core-shell nanowire array devices are characterized by spectrally resolved scanning photocurrent microscopy (SPCM). The spatially resolved external quantum efficiency is correlated with structure and composition inferred from atomic force microscope (AFM) topography, scanning transmission electron microscope (STEM) imaging, Raman microspectroscopy, and scanning photocurrent microscopy (SPCM) maps of the effective absorption edge. The experimental analyses are coupled with finite difference time domain simulations to provide mechanistic understanding of spatial variations in carrier generation and collection, which is essential to the development of heterogeneous novel architecture solar cell devices.
GaN-InGaN 核壳纳米线阵列器件的特点是光谱分辨扫描光电电流显微镜(SPCM)。从原子力显微镜(AFM)形貌、扫描透射电子显微镜(STEM)成像、拉曼微光谱和有效吸收边缘的扫描光电电流显微镜(SPCM)图谱推断出的结构和组成与空间分辨外量子效率相关。实验分析与有限差分时间域模拟相结合,为载流子产生和收集的空间变化提供了机理理解,这对于开发新型异质结构太阳能电池器件至关重要。