GaN/InGaN 核壳纳米线发光二极管阵列中量子阱的三维测绘。

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

机构信息

Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.

出版信息

Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12.

PMID:23919559

Abstract

Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.

摘要

关联原子探针断层成像术、横截面扫描透射电子显微镜和阴极荧光光谱学被用于分析纳米线阵列发光二极管（LED）中的 InGaN/GaN 多量子阱（QW）。In 分布、界面形态和掺杂剂聚集的断层分析揭示了与平面 LED QW 相当的材料质量。非极性侧平面 QW 和半极性顶 QW 的位置相关 CL 发射波长与 In 组成有关。