Kamrani Ehsan, Lesage Frederic, Sawan Mohamad
Annu Int Conf IEEE Eng Med Biol Soc. 2013;2013:2668-71. doi: 10.1109/EMBC.2013.6610089.
The main effects of on-chip integration on the performance and efficiency of silicon avalanche photodiode (SiAPD) and photodetector front-end is addressed in this paper based on the simulation and fabrication experiments. Two different silicon APDs are fabricated separately and also integrated with a transimpedance amplifier (TIA) front-end using standard CMOS technology. SiAPDs are designed in p+/n-well structure with guard rings realized in different shapes. The TIA front-end has been designed using distributed-gain concept combined with resistive-feedback and common-gate topology to reach low-noise and high gain-bandwidth product (GBW) characteristics. The integrated SiAPDs show higher signal-to-noise ratio (SNR), sensitivity and detection efficiency comparing to the separate SiAPDs. The integration does not show a significant effect on the gain and preserves the low power consumption. Using APDs with p-well guard-ring is preferred due to the higher observed efficiency after integration.
本文基于模拟和制造实验，探讨了片上集成对硅雪崩光电二极管（SiAPD）和光电探测器前端性能与效率的主要影响。分别制造了两种不同的硅雪崩光电二极管，并使用标准CMOS技术将其与跨阻放大器（TIA）前端集成。硅雪崩光电二极管采用p+/n阱结构设计，并带有不同形状的保护环。TIA前端采用分布式增益概念结合电阻反馈和共栅拓扑进行设计，以实现低噪声和高增益带宽积（GBW）特性。与单独的硅雪崩光电二极管相比，集成后的硅雪崩光电二极管具有更高的信噪比（SNR）、灵敏度和探测效率。集成对增益没有显著影响，并保持了低功耗。由于集成后观察到的效率更高，因此优先使用带有p阱保护环的雪崩光电二极管。
