Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
Nano Lett. 2013;13(11):5391-6. doi: 10.1021/nl402939t. Epub 2013 Oct 18.
We present a new type of electrically tunable strong coupling between planar metamaterials and epsilon-near-zero modes that exist in a doped semiconductor nanolayer. The use of doped semiconductors makes this strong coupling tunable over a wide range of wavelengths through the use of different doping densities. We also modulate this coupling by depleting the doped semiconductor layer electrically. Our hybrid approach incorporates strong optical interactions into a highly tunable, integrated device platform.
我们提出了一种新型的平面超材料与掺杂半导体纳米层中存在的近零折射率模式之间的电可调谐强耦合。通过使用不同的掺杂密度，掺杂半导体使这种强耦合能够在很宽的波长范围内进行调谐。我们还通过电耗尽掺杂半导体层来调制这种耦合。我们的混合方法将强光学相互作用纳入到一个高度可调谐的集成器件平台中。
